Datasheet > 6N65I

6N65I

更新时间： 2023-12-06 20:01:18

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
4页	734K
描述
场效应晶体管

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数据手册

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6N65I 数据手册

6N65I/6N65D

6A,650V N-Channel Power Mosfet

FEATURES



R_DS(ON)=1.7Ω@ V_GS= 10V

Ultra low gate charge ( typical 20 nC )

Low reverse transfer Capacitance ( CRSS = typical 10 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-251

TO-252

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

650

±30

V_GSS

Gate -Source voltage

I_D

Continuous Drain Current

6.2

I_DM

Pulsed Drain Current

24.8

E_AS

E_AR

Avalanche Energy

Single Pulsed

Repetitive

440

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

V/ns

R_θJA

T_J

Thermal resistance,Junction-to-Ambient

Junction Temperature

62.5

+150

℃/W

℃

T_OPR, Tstg

Operating and Storage Temperature

-55 to +150

℃

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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