6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
• Isolation Test Voltage: 5300 V
• TTL Compatible
RMS
• High Bit Rates: 1.0 MBd
• Bandwidth 2.0 MHz
NC
A
1
2
3
4
8
7
6
5
C (V
)
CC
B (V
)
B
• Open-Collector Output
• External Base Wiring Possible
• Lead-free component
C
C (V
)
O
NC
E (GND)
i179081
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb
e3
Pb-free
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
Order Information
Description
Part
Remarks
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
6N1135
6N1136
CTR ≥ 7 %, DIP-8
CTR ≥ 19 %, DIP-8
6N1135-X007
6N1136-X006
6N1136-X007
6N1136-X009
CTR ≥ 7 %, SMD-8 (option 7)
CTR ≥ 19 %, DIP-8 400 mil (option 6)
CTR ≥ 19 %, SMD-8 (option 7)
CTR ≥ 19 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
5.0
Unit
V
Reverse voltages
Forward current
IF
25
50
mA
mA
A
Peak forward current
t = 1.0 ms, duty cycle 50 %
IFM
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s
IFSM
Rth
1.0
700
45
Thermal resistance
K/W
mW
Power dissipation
Tamb = 70 °C
Pdiss
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
1