Single Channel Optocoupler
Mii
66116
Electrically Similar to 4N47-4N49
OPTOELECTRONIC PRODUCTS
DIVISION
Coaxial or Bulkhead Mount packages
Features:
Applications:
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High reliability
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Line Receivers
Base lead provided for conventional transistor
biasing
Switchmode Power Supplies
Signal ground isolation
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Very high gain, high voltage transistor
Hermetically sealed for reliability and stability
Stability over wide temperature range
High voltage electrical isolation
Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. These devices can be tested to customer specifications, as well as to MIL-PRF-38534 H&K
quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................ ±1kV
Collector-Base Voltage...........................................................................................................................................................45V
Collector-Emitter Voltage (See Note 1)..................................................................................................................................40V
Emitter-Base Voltage................................................................................................................................................................7V
Input Diode Reverse Voltage....................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2)....................................40mA
Continuous Collector Current ..............................................................................................................................................50mA
Peak Diode Current (See Note 3).............................................................................................................................................1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4) ................................300mW
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Storage Temperature..........................................................................................................................................-65°C to +125°C
Lead Temperature (1/16” (1.6mm) from case for 10 seconds).......................................................................................... 240°C
* JEDEC registered data
Package Dimensions
Schematic Diagram
Base
Collector
Case Lead
Emitter
C
A
K
E
B
Case Lead
ANODE
CATHODE
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.
3. This value applies for tw≤1us. PRR<300 pps.
4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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