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60S2-AP PDF预览

60S2-AP

更新时间: 2024-09-17 13:04:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 86K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

60S2-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.3
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

60S2-AP 数据手册

 浏览型号60S2-AP的Datasheet PDF文件第2页 
M C C  
60S05  
thru  
60S10  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
6 Amp Axial-Lead  
·
·
·
·
·
Glass Passivated Chip  
Low Forward Voltage Drop  
High Current Capability  
High Surge Current Capability  
Low Leakage  
Glass Passivated  
Rectifier  
50 - 1000 Volts  
Maximum Ratings  
DO-201AD  
·
·
Operating Junction Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
60S05  
60S1  
60S2  
60S4  
60S6  
60S8  
60S10  
60S05  
60S1  
60S2  
60S4  
60S6  
60S8  
60S10  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
140V  
280V  
420V  
560V  
700V  
A
Cathode  
Mark  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
6.0A  
TA = 100°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
Maximum  
DIMENSIONS  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 6.0A;  
TJ = 25°C*  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
5mA  
TJ = 25°C  
1.20  
25.40  
100mA TJ = 100°C  
Typical Junction  
Capacitance  
CJ  
150pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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