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5SGA06D4502 PDF预览

5SGA06D4502

更新时间: 2024-02-06 19:38:14
品牌 Logo 应用领域
ABB
页数 文件大小 规格书
5页 391K
描述
Asymmetric Gate turn-off Thyristor

5SGA06D4502 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75配置:SINGLE
JESD-30 代码:O-CXDB-X4元件数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:330 A
断态重复峰值电压:4500 V重复峰值反向电压:17 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:GATE TURN-OFF SCR
Base Number Matches:1

5SGA06D4502 数据手册

 浏览型号5SGA06D4502的Datasheet PDF文件第1页浏览型号5SGA06D4502的Datasheet PDF文件第2页浏览型号5SGA06D4502的Datasheet PDF文件第3页浏览型号5SGA06D4502的Datasheet PDF文件第4页 
5SGA 06D4502  
Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
Reverse avalanche capability  
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM  
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse  
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs  
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation :  
VGR = 10…15 V.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1236-00 Jun. 04  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  

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