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5SGA30J4502 PDF预览

5SGA30J4502

更新时间: 2024-01-18 08:42:04
品牌 Logo 应用领域
ABB 栅极
页数 文件大小 规格书
9页 365K
描述
Asymmetric Gate turn-off Thyristor

5SGA30J4502 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:3000 mA
最大直流栅极触发电压:1 VJESD-30 代码:O-CXDB-X4
通态非重复峰值电流:24000 A元件数量:1
端子数量:4最大通态电流:930000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1460 A断态重复峰值电压:4500 V
重复峰值反向电压:17 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:GATE TURN-OFF SCR
Base Number Matches:1

5SGA30J4502 数据手册

 浏览型号5SGA30J4502的Datasheet PDF文件第2页浏览型号5SGA30J4502的Datasheet PDF文件第3页浏览型号5SGA30J4502的Datasheet PDF文件第4页浏览型号5SGA30J4502的Datasheet PDF文件第5页浏览型号5SGA30J4502的Datasheet PDF文件第6页浏览型号5SGA30J4502的Datasheet PDF文件第7页 
VDRM  
ITGQM  
ITSM  
VT0  
=
=
4500 V  
3000 A  
Asymmetric Gate turn-off  
Thyristor  
= 24×103 A  
=
=
=
2.2 V  
0.6  
5SGA 30J4502  
rT  
mΩ  
2800 V  
VDclink  
Doc. No. 5SYA1202-03 Jan. 03  
Patented free-floating silicon technology  
Low on-state and switching losses  
Annular gate electrode  
Industry standard housing  
Cosmic radiation withstand rating  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
4500  
Unit  
V
Repetitive peak off-state  
VDRM  
VGR 2 V  
voltage  
Repetitive peak reverse  
voltage  
VRRM  
17  
V
V
Permanent DC voltage for VDclink  
Ambient cosmic radiation at sea level  
in open air.  
2800  
100 FIT failure rate  
Characteristic values  
Parameter  
Symbol Conditions  
max  
Unit  
Repetitive peak off-state  
IDRM  
60  
mA  
VD = VDRM, VGR 2 V  
current  
Repetitive peak reverse  
current  
IRRM  
20  
mA  
VR = VRRM, RGK = ∞ Ω  
Mechanical data  
Maximum rated values 1)  
Parameter  
Mounting force  
Characteristic values  
Parameter  
Pole-piece diameter  
Housing thickness  
Weight  
Symbol Conditions  
Fm  
min  
36  
typ  
40  
max  
44  
Unit  
kN  
Symbol Conditions  
min  
typ  
75  
26  
max  
Unit  
mm  
mm  
kg  
Dp  
± 0.1 mm  
H
± 0.5 mm  
m
1.3  
Surface creepage distance Ds  
Air strike distance Da  
Anode to Gate  
Anode to Gate  
33  
15  
mm  
mm  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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