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5KP60C-B PDF预览

5KP60C-B

更新时间: 2024-02-26 08:42:09
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
1页 175K
描述
Trans Voltage Suppressor Diode, 5000W, Bidirectional, 1 Element, Silicon

5KP60C-B 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.51
最小击穿电压:66.7 V外壳连接:ISOLATED
最大钳位电压:107 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-LALF-W2最大非重复峰值反向功率耗散:5000 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:BIDIRECTIONAL
认证状态:Not Qualified最大反向电流:10 µA
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

5KP60C-B 数据手册

  

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