Datasheet > 5KP60-E3/54

5KP60-E3/54

更新时间： 2024-02-21 20:28:46

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	89K
描述
Trans Voltage Suppressor Diode, 60V V(RWM), Unidirectional,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

5KP60-E3/54 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
Is Samacsys：	N	击穿电压标称值：	74.1 V
最大钳位电压：	107 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e3	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	60 V	子类别：	Transient Suppressors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

5KP60-E3/54 数据手册

5KP5.0 thru 5KP188A

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• P600, glass passivated chip junction

• Available in uni-directional polarity only

• 5000 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

Case Style P600

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

V_WM

P_PPM

P_D

5.0 V to 188 V

5000 W

8.0 W

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability

rating

I_FSM

500 A

T_Jmax.

175 °C

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

5000

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current 8.3 ms single half sine-wave (Fig. 5)

Instantaneous forward voltage at 100 A ⁽²⁾

See next table

8.0

P_D

I_FSM

600

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

Document Number: 88308

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

下载PDF

与5KP60-E3/54相关器件

型号	品牌	描述	获取价格	数据表
5KP60-E3/65	VISHAY	Trans Voltage Suppressor Diode, 5000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PLA	获取价格
5KP60-E3/66	VISHAY	Trans Voltage Suppressor Diode, 5000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PLA	获取价格
5KP60-E3/68	VISHAY	Trans Voltage Suppressor Diode, 5000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PLA	获取价格
5KP60-E3/70	VISHAY	Trans Voltage Suppressor Diode, 5000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PLA	获取价格
5KP60-E3/71	VISHAY	Trans Voltage Suppressor Diode, 5000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, PLA	获取价格
5KP60E3TR	MICROSEMI	Trans Voltage Suppressor Diode, 5000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-	获取价格

与5KP60-E3/54相关文章

STM32H743技术深度剖析与应用案例探索
2024-05-30

15
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
2024-05-30

15
74HC14芯片资料介绍：性能特性分析、引脚介绍
2024-05-30

13
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
2024-05-30

10

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP60-E3/54

5KP60-E3/54 技术参数

5KP60-E3/54 数据手册

与5KP60-E3/54相关器件

与5KP60-E3/54相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP60-E3/54

5KP60-E3/54 技术参数

5KP60-E3/54 数据手册

与5KP60-E3/54相关器件

与5KP60-E3/54相关文章

您还可以找

您在本页遇到什么问题？