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5KP33C

更新时间： 2024-10-31 21:01:55
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 981K
描述
Trans Voltage Suppressor Diode, 5000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN

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5KP33C 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.2其他特性：UL RECOGNIZED
最大击穿电压：40.6 V最小击穿电压：36.7 V
击穿电压标称值：40.8 V外壳连接：ISOLATED
最大钳位电压：59 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：5000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL最大功率耗散：8 W
认证状态：Not Qualified最大重复峰值反向电压：33 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

5KP33C 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 5 kW > 5KP series  
Pb e3  
RoHS  
5KP Series  
Description  
The 5KP Series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by  
lightning and other transient voltage events.  
Uni-directional  
Features  
Bi-directional  
• 5 kW peak pulse  
• Typical IR less than 2μA  
when VBR min>12V  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Glass passivated chip  
junction in P600 package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
• Excellent clamping  
capability  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC 61000-4-2 ESD  
• High temperature  
to reflow soldering  
guaranteed: 260°C/40sec  
/ 0.375”, (9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• UL Recognized compound  
meeting flammability  
rating V-0  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
5
Unit  
kW  
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
8.0  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
IFSM  
400  
30kV(Air), 30kV (Contact) • Pb-free E3 indicates that  
2nd level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
• Low incremental surge  
resistance  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only (Note 3)  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175  
°C  
TypicalThermal Resistance  
Junction to Lead  
RθJL  
RθJA  
8.0  
40  
°C/W  
°C/W  
TypicalThermal Resistance  
Junction to Ambient  
Applications  
Notes:  
TVS componants are ideal for the protection of I/O  
interfaces, VCC bus and other vulnerable circuits used in  
telecom, computer, industrial and consumer electronic  
applications.  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
Functional Diagram  
Additional Infomarion  
Bi-directional  
Datasꢀeet  
Saꢀples  
ꢀesourꢁes  
Cathode  
Anode  
Uni-directional  
© 2018 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 05/08/18  
123456

中文翻译

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