Datasheet > 5KP30A4-E3

5KP30A4-E3

更新时间： 2024-11-06 19:37:55

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
4页	34K
描述
DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

5KP30A4-E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	PLASTIC, CASE P600, 2 PIN
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

5KP30A4-E3 数据手册

5KP5.0 thru 5KP110A

Vishay Semiconductors

TransZorb® Transient Voltage Supressors

Stand-off Voltage

5.0 to 110 V

Peak Pulse Power 5000W

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

Case Style P600

• Glass passivated junction

• 5000W peak pulse power capability with a 10/1000µs

waveform, repetition rate (duty cycle): 0.05%

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

1.0 (25.4)

MIN.

• Devices with V_(BR)> 10V I_Dare typically less than 1.0µA

0.360 (9.1)

0.340 (8.6)

Mechanical Data

Case: Molded plastic body over glass passivated junction

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

0.360 (9.1)

0.340 (8.6)

High temperature soldering guaranteed:

265°C/10 seconds, 0.375" (9.5mm) lead length,

5lbs. (2.3 kg) tension

Polarity: For uni-directional types, the color band

denotes the cathode, which is positive with respect to the

anode under normal TVS operation

0.052 (1.32)

1.0 (25.4)

MIN.

0.048 (1.22)

DIA.

Mounting Position: Any

Weight: 0.07oz., 2.1g

Packaging codes/options:

1/750 ea. per Bulk Box

4/800 ea. per 13” Reel (52mm Tape)

23/300 ea. per Ammo Box (52mm Tape)

Dimensions in inches and (millimeters)

Maximum Ratings and Characteristics Ratings at 25°C unless otherwise noted.

Parameter

Symbol

Value

Unit

Peak pulse power dissipation with a 10/1000µs waveform⁽¹⁾

Peak pulse current with a 10/1000µs waveform⁽¹⁾

P_PPM

Minimum 5000

See next table

I_PPM

Steady state power dissipation at T_L= 75°C

lead lengths 0.375” (9.5mm)⁽²⁾

P_M(AV)

8.0

Peak forward surge current, 8.3ms single half sine-wave⁽³⁾

Instantaneous forward voltage at 100A⁽³⁾

I_FSM

V_F

500

3.5

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25°C per Fig. 2.

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5.

(3) Measured on 8.3ms single half sine-wave or equivalent square wave,

duty cycle = 4 pulses per minute maximum

Document Number 88308

14-Jan-02

www.vishay.com

12 3 4

中文翻译

下载PDF

与5KP30A4-E3相关器件

型号	品牌	获取价格	描述	数据表
5KP30A-5A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 30V V(RWM), Unidirectional, 1 Element, Silicon,
5KP30A-5AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 30V V(RWM), Unidirectional, 1 Element, Silicon,
5KP30A-5RE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 5000W, 30V V(RWM), Unidirectional, 1 Element, Silicon
5KP30A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
5KP30AB	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon,
5KP30A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
5KP30AB-2	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon,
5KP30AB-2	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 5000W, Unidirectional, 1 Element, Silicon,
5KP30A-BP	MCC	获取价格	Trans Voltage Suppressor Diode, 5000W, 30V V(RWM), Unidirectional, 1 Element, Silicon, ROH
5KP30A-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 5000W, 30V V(RWM), Unidirectional, 1 Element, Silicon,

与5KP30A4-E3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP30A4-E3

5KP30A4-E3 技术参数

5KP30A4-E3 数据手册

与5KP30A4-E3相关器件

与5KP30A4-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5KP30A4-E3

5KP30A4-E3 技术参数

5KP30A4-E3 数据手册

与5KP30A4-E3相关器件

与5KP30A4-E3相关文章

您还可以找

您在本页遇到什么问题？