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5962R9676602VXC PDF预览

5962R9676602VXC

更新时间: 2024-10-29 20:31:19
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
11页 108K
描述
256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40

5962R9676602VXC 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:40
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N其他特性:TWO PROGRAMMABLE 8-BIT I/O PORTS
JESD-30 代码:R-CDIP-T40JESD-609代码:e4
内存密度:2048 bit内存集成电路类型:MULTI-PORT SRAM
内存宽度:8功能数量:1
端子数量:40字数:256 words
字数代码:256工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256X8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
认证状态:Not Qualified筛选级别:MIL-PRF-38535 Class V
座面最大高度:5.72 mm标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:GOLD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL总剂量:100k Rad(Si) V
宽度:15.24 mmBase Number Matches:1

5962R9676602VXC 数据手册

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HS-81C55RH, HS-81C56RH  
TM  
Data Sheet  
August 2000  
File Number 3039.2  
Radiation Hardened 256 x 8 CMOS RAM  
Features  
The HS-81C55/56RH are radiation hardened RAM and I/O  
chips fabricated using the Intersil radiation hardened Self-  
Aligned Junction Isolated (SAJI) silicon gate technology.  
Latch-up free operation is achieved by the use of epitaxial  
starting material to eliminate the parasitic SCR effect seen in  
conventional bulk CMOS devices.  
• Electrically Screened to SMD # 5962-96766  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Hardened EPI-CMOS  
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)  
8
- Transient Upset. . . . . . . . . . . . . . . . . .>1 x 10 rad(Si)/s  
12  
- Latch-Up Free. . . . . . . . . . . . . . . . . .>1 x 10 rad(Si)/s  
The HS-81C55/56RH is intended for use with the  
HS-80C85RH radiation hardened microprocessor system.  
The RAM portion is designed as 2048 static cells organized  
as 256 x 8. A maximum post irradiation access time of  
500ns allows the HS-81C55/56RH to be used with the  
HS-80C85RH CPU without any wait states. The  
HS-81C55RH requires an active low chip enable while the  
HS-81C56RH requires an active high chip enable. These  
chips are designed for operation utilizing a single 5V power  
supply.  
• Electrically Equivalent to Sandia SA 3001  
• Pin Compatible with Intel 8155/56  
• Bus Compatible with HS-80C85RH  
• Single 5V Power Supply  
• Low Standby Current . . . . . . . . . . . . . . . . . . . .200µA Max  
• Low Operating Current . . . . . . . . . . . . . . . . . . . . 2mA/MHz  
• Completely Static Design  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
• Internal Address Latches  
Two Programmable 8-Bit I/O Ports  
• One Programmable 6-Bit I/O Port  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-96766. A “hot-link” is provided  
on our homepage for downloading.  
• Programmable 14-Bit Binary Counter/Timer  
• Multiplexed Address and Data Bus  
• Self Aligned Junction Isolated (SAJI) Process  
http://www.intersil.com/spacedefense/space.asp  
Ordering Information  
o
o
• Military Temperature Range . . . . . . . . . . . -55 C to 125 C  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
Functional Diagram  
ORDERING NUMBER  
5962R9676601QXC  
5962R9676601QYC  
5962R9676601VXC  
5962R9676601VYC  
5962R9676602QXC  
5962R9676602QYC  
5962R9676602VXC  
5962R9676602VYC  
( C)  
HS1-81C55RH-8  
HS9-81C55RH-8  
HS1-81C55RH-Q  
HS9-81C55RH-Q  
HS1-81C56RH-8  
HS9-81C56RH-8  
HS1-81C56RH-Q  
HS9-81C56RH-Q  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
PORT A  
IO/M  
256 x 8  
STATIC  
RAM  
8
PA0 - PA7  
PB0 - PB7  
PC0 - PC5  
A
B
C
AD0 - AD7  
CE OR CE  
ALE  
PORT B  
8
RD  
PORT C  
8
WR  
RESET  
TIMER  
VDD (10V)  
GND  
TIMER CLK  
TIMER OUT  
81C55RH = CE  
81C56RH = CE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1

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