生命周期: | Transferred | 零件包装代码: | DIP |
包装说明: | DIP, DIP16,.3 | 针数: | 16 |
Reach Compliance Code: | compliant | ECCN代码: | USML XV(E) |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.46 |
Is Samacsys: | N | 其他特性: | OVERVOLTAGE PROTECTION |
模拟集成电路 - 其他类型: | SINGLE-ENDED MULTIPLEXER | JESD-30 代码: | R-CDIP-T16 |
JESD-609代码: | e4 | 标称负供电电压 (Vsup): | -15 V |
信道数量: | 8 | 功能数量: | 1 |
端子数量: | 16 | 标称断态隔离度: | 50 dB |
通态电阻匹配规范: | 126 Ω | 最大通态电阻 (Ron): | 1800 Ω |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | +-15 V |
认证状态: | Not Qualified | 筛选级别: | MIL-PRF-38535 Class V |
座面最大高度: | 5.08 mm | 最大信号电流: | 0.008 A |
子类别: | Multiplexer or Switches | 最大供电电流 (Isup): | 2 mA |
标称供电电压 (Vsup): | 15 V | 表面贴装: | NO |
最长断开时间: | 1000 ns | 最长接通时间: | 1000 ns |
切换: | BREAK-BEFORE-MAKE | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | GOLD |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 总剂量: | 10k Rad(Si) V |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
5962D9569402VEA | INTERSIL | Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Ov |
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5962D9569402VEC | INTERSIL | Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Ov |
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5962D9569402VEC | RENESAS | 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP16 |
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5962D9669401VVC | ETC | x1 SRAM |
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5962D9669401VXC | ETC | x1 SRAM |
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5962D9669501VVC | ETC | x4 SRAM |
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