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5962F0052302VXC

更新时间： 2024-09-17 20:06:59
品牌 Logo 应用领域
瑞萨 - RENESAS 输出元件
页数 文件大小 规格书
3页 119K
描述
1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5V, BCY3, TO-206AB, 3 PIN

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5962F0052302VXC 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：BCY, CAN3/4,.1Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.78模拟集成电路 - 其他类型：TWO TERMINAL VOLTAGE REFERENCE
JESD-30 代码：O-XBCY-W3JESD-609代码：e4
功能数量：1输出次数：1
端子数量：3最高工作温度：125 °C
最低工作温度：-55 °C最大输出电压：2.505 V
最小输出电压：2.495 V标称输出电压：2.5 V
封装主体材料：UNSPECIFIED封装代码：BCY
封装等效代码：CAN3/4,.1封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified筛选级别：MIL-PRF-38535 Class V
表面贴装：NO温度等级：MILITARY
端子面层：Gold (Au)端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
总剂量：300k Rad(Si) V微调/可调输出：YES
最大电压容差：0.2%Base Number Matches：1

5962F0052302VXC 数据手册

 浏览型号5962F0052302VXC的Datasheet PDF文件第2页浏览型号5962F0052302VXC的Datasheet PDF文件第3页 
Radiation Hardened 2.5V Reference  
IS-1009RH, IS-1009EH  
Features  
• Electrically screened to SMD # 5962-00523  
• QML qualified per MIL-PRF-38535 requirements  
• EH version acceptance tested to 50krad(Si) (LDR)  
TM  
The Star*Power Radiation Hardened IS-1009RH, IS-1009EH  
are a 2.5V shunt regulator diode is designed to provide a stable  
2.5V reference over a wide current range.  
These devices are designed to maintain stability over the full  
military temperature range and over time. The 0.2% reference  
tolerance is achieved by on-chip trimming.  
• Radiation environment  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)  
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)  
- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated  
An adjustment terminal is provided to allow for the calibration  
of system errors. The use of this terminal to adjust the  
reference voltage does not effect the temperature coefficient.  
• Reverse breakdown voltage (V ) . . . . . . . . . . . . . . . . . . . . 2.5V  
Z
• Change in V vs. current (400µA to 10mA) . . . . . . . . . . .6mV  
Z
Constructed with the Intersil dielectrically isolated EBHF  
process, these devices are immune to Single Event Latch-up  
and have been specifically designed to provide highly reliable  
performance in harsh radiation environments.  
• Change in V vs. temperature (-55°C to +125°C). . . . .15mV  
Z
• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA  
• Device is tested with 10µF shunt capacitance connected  
from V+ to V-, which provides optimum stability  
Specifications for Rad Hard QML devices are controlled by the  
Defense Logistics Agency Land and Maritime (DLA). The SMD  
numbers listed here must be used when ordering.  
• Interchangeable with 1009 and 136 industry types  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-00523.  
Applications  
• Power supply monitoring  
• Reference for 5V systems  
• A/D and D/A reference  
Pin Configurations  
IS2-1009RH, IS2-1009EH  
(TO-206AB CAN)  
BOTTOM VIEW  
V+  
2
V-  
3
ADJ  
1
ISYE-1009RH, ISYE-1009EH  
(SMD.5)  
BOTTOM VIEW  
2
ADJ  
V+  
V-  
3
1
September 12, 2013  
FN4780.6  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2000, 2006, 2011, 2013. All Rights Reserved  
Intersil (and design) and Star*Power are trademarks owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
123

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