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530AA10M000GR PDF预览

530AA10M000GR

更新时间: 2024-10-29 08:41:07
品牌 Logo 应用领域
芯科 - SILICON /
页数 文件大小 规格书
8页 165K
描述
Oscillator

530AA10M000GR 数据手册

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Si530  
1. Electrical Specifications  
Table 1. Si530 Electrical Specifications  
Parameter  
Min  
Typ  
Max  
Units  
Notes  
Frequency  
Nominal Frequency  
Specified at time of order by  
10  
10  
945  
160  
P/N. Also available in bands from 970  
to 1134 MHz and 1213 to 1417 MHz.  
MHz  
LVDS/CML/LVPECL  
CMOS  
Initial Accuracy  
Measured at +25 °C at time of  
shipping.  
–1.5  
+1.5  
ppm  
ppm  
ppm  
–20  
–50  
+20  
+50  
Option specified at time of order by  
P/N.  
Temperature Stability  
Aging  
Frequency drift over projected 15 year  
life.  
±10  
Outputs  
Measured at:  
LVPECL: VDD – 1.3 V (differential)  
Symmetry  
45  
55  
%
LVDS:  
CMOS:  
1.25 V (differential)  
VDD/2  
RMS Jitter for F  
> 500 MHz  
F
> 500 MHz  
OUT  
OUT  
12 kHz to 20 MHz  
50 kHz to 80 MHz  
0.27  
0.30  
ps Differential Modes:  
LVPECL/LVDS/CML  
RMS Jitter for F  
500 MHz  
of 125 to  
125 < F  
Differential Modes:  
< 500 MHz  
OUT  
OUT  
12 kHz to 20 MHz  
0.5  
ps LVPECL/LVDS/CML  
Period Jitter for F  
Peak-to-Peak  
RMS  
<160 MHz  
Any output  
ps N = 1000 cycles  
OUT  
5
1
LVPECL Output Option  
mid-level  
swing (diff)  
V
DD – 1.42  
1.1  
VDD – 1.25  
1.9  
V
VPP  
VPP  
50 to VDD – 2.0 V  
0.5  
0.93  
swing (single-ended)  
LVDS Output Option  
mid-level  
swing (diff)  
1.125  
0.5  
1.2  
0.7  
1.275  
0.9  
V
VPP  
Rterm = 100 (differential)  
Rterm = 100 (differential)  
CML Output Option  
0.35  
VDD – 0.36  
0.425  
0.5  
V
VPP  
mid-level  
swing  
2
Preliminary Rev. 0.2  

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