Datasheet > 530AA10M000GR

530AA10M000GR

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
芯科 - SILICON		/
页数	文件大小	规格书
8页	165K
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Oscillator

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530AA10M000GR 数据手册

Si530

Table 1. Si530 Electrical Specifications (Continued)

Parameter

Min

Typ

Max

Units

Notes

CMOS Output Option

0.8xV_DD

—

V_DD

0.4

C_L= 15 pF

V_OL

—

350

ps CML/LVPECL/LVDS at 20%/80%

Rise/Fall time

CMOS with V = 1.8 V & CL = 15 pF

CMOS with V = 3.3 V & CL = 15 pF

Inputs

Voltage (V_DD

)

2.97

2.25

1.71

3.3

2.5

1.8

3.63

2.75

1.89

3.3 V option

2.5 V option

1.8 V option

Optional parameter specified by P/N

Current

—

Output enabled

TriState mode

Output Enable

V_IH

V_IL

0.75xV_DD

—

V_DD

0.5

Table 2. Absolute Maximum Ratings

Parameter

Supply Voltage (V

Symbol

Rating

Units

)

–0.5 to +3.8

–55 to +125

Storage Temperature

°C

Table 3. Environmental Conditions

Parameter

Conditions/Test Method

Operating Temperature

Mechanical Shock

Mechanical Vibration

Solderability

–40 to +85 °C

MIL-STD-883F, Method 2002.3 B

MIL-STD-883F, Method 2007.3 A

MIL-STD-883F, Method 203.8

MIL-STD-883F, Method 1014.7

MIL-STD-883F, Method 2016

Gross & Fine Leak

Resistance to Solvents

Preliminary Rev. 0.2

1 234 5 6 7 8

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