Datasheet > 524A4

524A4

更新时间： 2024-11-02 23:21:43

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
2页	35K
描述
Infrared Emitting Diodes (IRED)

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524A4 数据手册

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-524A4

Description

Package Dimensions

The MIE-524A4 is an infrared emitting diode utilizing

GaAs with AlGaAs window coating chip technology.

It is molded in water clear plastic package.

f 5.05

(.200)

Unit : mm (inches )

5.47

(.215)

7.62

(.300)

5.90

(.230)

1.00

(.040)

FLAT DENOTES CATHODE

23.40 MIN.

(.920)

Features

0.50 TYP.

(.020)

l High radiant power and high radiant intensity

l Suitable for DC and high pulse current operation

l Standard T-1 3/4 ( f 5mm ) package, radiation angle : 20°

l Peak wavelength l _p= 940 nm

1.00MIN

(.040)

2.54

(.100)

l Good spectral matching to si-photodetector

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

'@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/17/2000

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