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4N80G-N-TM3-T PDF预览

4N80G-N-TM3-T

更新时间: 2024-01-21 14:47:53
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
6页 223K
描述
Power Field-Effect Transistor

4N80G-N-TM3-T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

4N80G-N-TM3-T 数据手册

 浏览型号4N80G-N-TM3-T的Datasheet PDF文件第2页浏览型号4N80G-N-TM3-T的Datasheet PDF文件第3页浏览型号4N80G-N-TM3-T的Datasheet PDF文件第4页浏览型号4N80G-N-TM3-T的Datasheet PDF文件第5页浏览型号4N80G-N-TM3-T的Datasheet PDF文件第6页 
UNISONIC TECHNOLOGIES CO., LTD  
4N80-N  
Power MOSFET  
4.0A, 800V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N80-N is a N-channel mode power MOSFET using  
UTC’s advanced technology to provide costomers planar stripe and  
DMOS technology. This technology is specialized in allowing a  
minimum on-state resistance, and superior switching performance. It  
also can withstand high energy pulse in the avalanche and  
commutation mode.  
The UTC 4N80-N is universally applied in high efficiency switch  
mode power supply.  
FEATURES  
* RDS(on)<3.0@VGS =10V  
* High switching speed  
* Improved dv/dt capability  
* 100% avalanche tested  
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
3
S
S
4N80L-TM3-T  
4N80L-TN3-R  
4N80G-TM3-T  
4N80G-TN3-R  
TO-251  
TO-252  
G
G
Tube  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
MARKING  
www.unisonic.com.tw  
Copyright © 2014 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-A96.A  

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