Datasheet > 4N90_11

4N90_11

更新时间： 2024-01-30 14:04:39

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友顺 - UTC		/
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描述
4 Amps, 900 Volts N-CHANNEL POWER MOSFET

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4N90_11 数据手册

UNISONIC TECHNOLOGIES CO., LTD

4N90

Preliminary

Power MOSFET

4 Amps, 900 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

TO-252

TO-220

The UTC 4N90 is a N-channel enhancement MOSFET adopting

UTC’s advanced technology to provide customers with DMOS,

planar stripe technology. This technology is designed to meet the

requirements of the minimum on-state resistance and perfect

switching performance. It also can withstand high energy pulse in

the avalanche and communication mode.

The UTC 4N90 is particularly applied in high efficiency switch

mode power supplies.

FEATURES

* V_DS=900V

* I_D=4A

TO-220F

* R_DS(ON)=4.2Ω @ V_GS=10V

* Typically 17nC low gate charge

* High switching speed

* Typically 5.6pF low C_RSS

* 100% avalanche tested

* Improved dv/dt capability

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

4N90L-TA3-T

4N90L-TF3-T

4N90L-TN3-R

Halogen Free

4N90G-TA3-T

4N90G-TF3-T

4N90G-TN3-R

TO-220

TO-220F

TO-252

Tube

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 6

QW-R502-479.b

12 3 4 5 6

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与4N90_11相关器件

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4N90C	UTC	获取价格	4.0A, 900V N-CHANNEL POWER MOSFET
4N90-C	UTC	获取价格	N-CH
4N90CL-TF3-T	UTC	获取价格	4.0A, 900V N-CHANNEL POWER MOSFET
4N90-CQ	UTC	获取价格	N-CH
4N90G-C-TQ2-R	UTC	获取价格	Power Field-Effect Transistor,
4N90G-C-TQ2-T	UTC	获取价格	Power Field-Effect Transistor,
4N90G-T3N-T	UTC	获取价格	Power Field-Effect Transistor,
4N90G-TA3-T	UTC	获取价格	4 Amps, 900 Volts N-CHANNEL POWER MOSFET
4N90G-TF1-T	UTC	获取价格	Power Field-Effect Transistor,
4N90G-TF2-T	UTC	获取价格	Power Field-Effect Transistor,