是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.59 | 雪崩能效等级(Eas): | 460 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 12 pF |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 36 W | 最大脉冲漏极电流 (IDM): | 16 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 160 ns |
最大开启时间(吨): | 140 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
4N80G-TM3-T | UTC |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
4N80G-TN3-R | UTC |
获取价格 |
4.0A, 800V N-CHANNEL POWER MOSFET | |
4N80G-TN3-T | UTC |
获取价格 |
4.0A, 800V N-CHANNEL POWER MOSFET | |
4N80-KA | UTC |
获取价格 |
N-CH | |
4N80L-T2Q-T | UTC |
获取价格 |
N-CHANNEL POWER MOSFET | |
4N80L-TA3-T | UTC |
获取价格 |
4.0A, 800V N-CHANNEL POWER MOSFET | |
4N80L-TF1-T | UTC |
获取价格 |
4.0A, 800V N-CHANNEL POWER MOSFET | |
4N80L-TF2-T | UTC |
获取价格 |
N-CHANNEL POWER MOSFET | |
4N80L-TF3-T | UTC |
获取价格 |
4.0A, 800V N-CHANNEL POWER MOSFET | |
4N80L-TM3-T | UTC |
获取价格 |
N-CHANNEL POWER MOSFET |