Datasheet > 4N60G-TND-R

4N60G-TND-R

更新时间： 2022-02-26 10:17:05

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4N60G-TND-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

4N60-N

Power MOSFET

4A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 4N60-N is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power

supplies, PWM motor controls, high efficient DC to DC

converters and bridge circuits.



FEATURES

* R_DS(ON)< 2.5Ω @ V_GS= 10 V, I_D= 2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high RuggednessA



SYMBOL

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