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3SK180-6 PDF预览

3SK180-6

更新时间： 2024-02-25 09:07:09
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
5页 175K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 30MA I(D) | SOT-143VAR

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3SK180-6 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.84外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：15 V
最大漏极电流 (Abs) (ID)：0.03 A最大漏极电流 (ID)：0.03 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：0.05 pF
最高频带：VERY HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G4
元件数量：1端子数量：4
工作模式：DUAL GATE, DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.2 W最小功率增益 (Gp)：22 dB
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

3SK180-6 数据手册

 浏览型号3SK180-6的Datasheet PDF文件第2页浏览型号3SK180-6的Datasheet PDF文件第3页浏览型号3SK180-6的Datasheet PDF文件第4页浏览型号3SK180-6的Datasheet PDF文件第5页 
Ordering number:ENN2129B  
N-Channel Silicon MOSFET (Dual Gate)  
3SK180  
High-Frequency General-Purpose Amplifier  
Applications  
Applications  
Package Dimensions  
unit:mm  
· FM tuners and VHF tuners.  
2046A  
Features  
[3SK180]  
1.9  
· High power gain and low noise figure.  
· High forward transfer admittance.  
0.95  
0.95  
0.4  
0.16  
4
3
0 to 0.1  
1
2
0.6  
0.95 0.85  
2.9  
1 : Drain  
2 : Source  
3 : Gate 1  
4 : Gate 2  
SANYO : CP4  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
15  
V
V
DS  
Gate1-to-Source Voltage  
Gate2-to-Source Voltage  
Drain Current  
V
±7  
G1S  
V
±7  
30  
V
G2S  
I
mA  
mW  
˚C  
˚C  
D
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
D
Tch  
200  
125  
Tstg  
–55 to +125  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
15  
max  
Drain-to-Source Voltage  
V
V
I
=–4V, V =0V, I =100µA  
G2S DS  
V
V
DS  
G1S  
V
V
Gate1-to-Source Breakdown Voltage  
Gate2-to-Source Breakdown Voltage  
Gate1-to-Source Cutoff Voltage  
Gate2-to-Source Cutoff Voltage  
Gate1-to-Source Leakage Current  
Gate2-to-Source Leakage Current  
Zero-Gate Voltage Drain Current  
=10µA, V =0, V  
DS  
=0V  
±7  
±7  
(BR)G1SS  
(BR)G2SS  
G1  
G2S  
I
=10µA, V =0, V  
DS  
=0V  
V
G2  
G1S  
V
V
V
V
V
V
=10V, V  
=4V, I =100µA  
D
=0V, I =100µA  
D
=V =0V  
G2S DS  
=V =0V  
G1S DS  
–3  
V
G1S(off)  
G2S(off)  
DS  
G2S  
G1S  
V
=10V, V  
–2.5  
±50  
±50  
24*  
V
DS  
I
=±5V, V  
nA  
nA  
mA  
G1SS  
G1S  
G2S  
I
=±5V, V  
G2SS  
I
=10V, V  
=0, V  
=4V  
2.5*  
DSS  
DS  
G1S  
6.0 5.0  
G2S  
5
* : The 3SK180 is classified by I  
Marking : DJ  
as follows : (unit : mA)  
Continued on next page.  
DSS  
2.5  
4
12.0 10.0  
6
24.0  
I
rank : 4, 5, 6  
DSS  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82599TH (KT)/90895MO (KOTO)6047KI/4246AT, TS 8-9917 No.2129–1/5  
12345

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