Datasheet > 3SK166A-2

3SK166A-2

更新时间： 2024-01-12 20:53:35

品牌	Logo	应用领域
索尼 - SONY		栅
页数	文件大小	规格书
5页	75K
描述
GaAs N-channel Dual Gate MES FET

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数据手册

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3SK166A-2 数据手册

3SK166A

ID vs. VG2S

gm vs. VG1S

100

(VDS = 5V)

VG2S

= 1.5V

VG1S

= 0V

–0.2V

–0.4V

1.0V

–0.6V

–0.8V

–1.0V

0.5V

–1.2V

–1.4V

–0.5V

–1.0V

–2.0

–1.5

–1.0

–0.5

–2.0

–1.5

–1.0

–0.5

VG2S – Gate 2 to source voltage [V]

VG1S – Gate 1 to source voltage [V]

NF vs. VG1S

Ga vs. VG1S

(VDS = 5V, f = 800MHz)

VG2S = 1.5V

1.0V

1.5V

VG2S = 0.5V

1.0V

1.5V

–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9

VG1S – Gate 1 to source voltage [V]

NF, Ga vs. ID

NF, Ga vs. f

3.0

2.5

2.0

1.5

1.0

0.5

(VDS = 5V, VG2S = 1.5V, f = 800MHz)

(VDS = 5V, VG2S = 1.5V, ID = 10mA)

2.5

2.0

1.5

1.0

0.5

NFmin

10 12 14 16 18 20 22

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

f – Frequency [GHz]

ID – Drain current [mA]

– 3 –

1 234 5

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