3SK176A-UHH-A

更新时间： 2024-02-29 11:54:46

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管场效应晶体管有线电视光电二极管栅
页数	文件大小	规格书
6页	59K
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中文翻译

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数据手册

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3SK176A-UHH-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK176A

RF AMP. AND MIXER FOR CATV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

PACKAGE DIMENSIONS

•

High Power Gain:

Low Noise Figure:

GPS = 24 dB TYP. (f = 470 MHz)

NF = 2.0 dB TYP. (f = 470 MHz)

NF = 1.0 dB TYP. (f = 55 MHz)

(Unit: mm)

+0.2

2.8

–0.1

+0.2

1.5

–0.1

•

Automatically Mounting: Embossed Type Taping

Suitable for use as RF amplifier and Mixer in CATV tuner.

Small Package:

4 Pins Mini Mold

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Drain Current

VDSX

VG1S

VG2S

I^D

±8 (±10)*

5°

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

200

Tch

125

T^stg

–55 to +125

1. Source

2. Drain

3. Gate2

4. Gate1

R^L≥ 10 kΩ

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC

SYMBOL

BV^DSX

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Drain to Source Breakdown

Voltage

VG1S = VG2S = –2 V, ID = 10 µA

Drain Current

IDSX

1.0

+1.0

±20

VDS = 5 V, VG1S = 0.75 V, VG2S = 4 V

VDS = 6 V, VG2S = 3 V, ID = 10 µA

VDS = 6 V, VG1S = 3 V, ID = 10 µA

VDS = 0, VG2S = 0, VG1S = ±10 V

VDS = 0, VG1S = 0, VG2S = ±10 V

Gate1 to Source Cutoff Voltage

Gate2 to Source Cutoff Voltage

Gate1 Reverse Current

Gate2 Reverse Current

Forward Transfer Admittance

VG1S(off)

VG2S(off)

IG1SS

IG2SS

| yfs |

25.5

VDS = 5 V, VG2S = 4 V, ID = 10 mA

f = 1 kHz

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Power Gain

Ciss

2.2

1.3

2.7

1.6

3.2

1.9

VDS = 6 V, VG2S = 3 V, ID = 10 mA

f = 1 MHz

Coss

Crss

GPS

NF1

NF2

0.015

24.0

2.0

0.03

21.0

VDS = 6 V, VG2S = 3 V, ID = 10 mA

f = 470 MHz

Noise Figure 1

3.5

2.5

VDS = 6 V, VG2S = 3 V, ID = 10 mA

f = 55 MHz

Noise Figure 2

1.0

IDSX Classification

Class

U87/UHG*

U88/UHH*

U88

Marking

IDSX (mA)

U87

1.0 to 6.0

4.0 to 10.0

* Old Specification/New Specification

Document No. P10567EJ2V0DS00 (2nd edition)

(Previous No. TD-2263)

Date Published August 1995 P

Printed in Japan

11999859

12 3 4 5 6

中文翻译

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与3SK176A-UHH-A相关器件

型号	品牌	获取价格	描述	数据表
3SK177	NEC	获取价格	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI M
3SK177-LU71	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-LU72	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-LU73	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-LU74	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-T1	NEC	获取价格	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI M
3SK177-T1BU71	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-T1BU73	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-T1BU74	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK177-T2BU71	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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