3SK131

更新时间： 2024-11-05 21:55:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	66K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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3SK131 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK131

RF AMP. FOR VHF TV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4PIN MINI MOLD

PACKAGE DIMENSIONS

FEATURES

(Unit: mm)

•

Suitable for use as RF amplifier in VHF TV tuner.

Low C^rss: 0.05 pF TYP.

+0.2

−0.3

2.8

1.5

+0.2

−0.1

High G^ps: 23 dB TYP.

Low NF : 1.3 dB TYP.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Drain Current

V^DSX

V^G1S

V^G2S

I^D

5°

Total Power Dissipation

Channel Temperature

Storage Temperature

P^T

200

T^ch

125

T^stg

55 to +125

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain Current

SYMBOL

BV^DSX

I^DSS

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^G1S= V^G2S= 2 V, I^D= 10

V^DS= 6 V, V^G2S= 3 V, V^G1S= 0

Gate1 to Source Cutoff Voltage

Gate2 to Source Cutoff Voltage

Gate1 Reverse Current

V^G1S(OFF)

V^G2S(OFF)

I^G1SS

2.0

1.5

V^DS= 8 V, V^G2S= 0, I^D= 5

V^DS= 8 V V^G1S= 0, I^D= 5

V^DS= 0, V^G1S= 8 V, V^G2S= 0

V^DS= 0, V^G2S= 8 V, V^G1S= 0

V^DS= 6 V, V^G2S= 3 V, I^D= 10 mA

f = 1 kHz

Gate2 Reverse Current

I^G2SS

Forward Transfer Admittance

y^fs

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Power Gain

C^iss

C^oss

C^rss

C^ps

4.0

2.2

5.0

2.9

0.05

6.5

3.7

V^DS= 6 V, V^G2S= 3 V, I^D= 10 mA

f = 1 MHz

0.08

V^DS= 10 V, V^G2S= 5 V, I^D= 10 mA

f = 200 MHz

Noise Figure

1.2

2.5

I^DSSclassification V11 7-13 mA V12 11-19 mA V13 17-25 mA

Document No. P12449EJ2V0DS00 (2nd edition)

(Previous No. TC-1508)

Date Published March 1997 N

Printed in Japan

1983

12 3 4 5 6 7 8

中文翻译

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与3SK131相关器件

型号	品牌	获取价格	描述	数据表
3SK131-LV11	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK131-T2BV12	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK131-V11	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK131-V12	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK131-V13	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C
3SK132A-LU35	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK132A-LU36	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK132A-T1BU35	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK132A-T1BU36	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
3SK132A-T2BU35	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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