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3SK126 PDF预览

3SK126

更新时间: 2024-11-08 22:14:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管电视射频光电二极管放大器
页数 文件大小 规格书
4页 231K
描述
N CHANNEL DUAL GATE MOS TYPE (TY TUNER, VHF RF AMPLIFIER, TV TUNER VHF MIXER APPLICATIONS)

3SK126 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknown风险等级:5.27
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
最大漏极电流 (Abs) (ID):0.03 A最大漏极电流 (ID):0.03 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):0.05 pF
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:DUAL GATE, DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
最小功率增益 (Gp):20 dB认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

3SK126 数据手册

 浏览型号3SK126的Datasheet PDF文件第2页浏览型号3SK126的Datasheet PDF文件第3页浏览型号3SK126的Datasheet PDF文件第4页 

3SK126 替代型号

型号 品牌 替代类型 描述 数据表
BF996S NXP

功能相似

N-channel dual-gate MOS-FET
BF998WR NXP

功能相似

N-channel dual-gate MOS-FET

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