Datasheet > 3N170-71

3N170-71

更新时间： 2022-11-25 19:10:22

品牌	Logo	应用领域
CALOGIC		开关
页数	文件大小	规格书
2页	26K
描述
N-Channel Enhancement Mode MOSFET Switch

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数据手册

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3N170-71 数据手册

3N170 / 3N171

CORPORATION

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified) Substrate connected to source.

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

I_D= 10µA, V_GS= 0

_GS= ±35V, V_DS= 0

V_GS= 35V, V_DS= 0, T_A= 125^oC

_DS= 10V, V_GS= 0

BV_DSS

Drain-Source Breakdown Voltage

±10

100

I_GSS

Gate Leakage Current

I_DSS

Zero-Gate-Voltage Drain Current

Gate-Source Threshold Voltage

T_A= 125^oC

1.0

2.0

3.0

µA

3N170

3N171

1.0

1.5

V_GS(th)

V_DS= 10V, I_D= 10µA

I_D(on)

"ON" Drain Current

V_GS= 10V, V_DS= 10V

V_DS(on)

r_ds(on)

Drain-Source "ON" Voltage

Drain-Source ON Resistance

Forward Transfer Admittance

Reverse Transfer Capacitance (Note 1)

Input Capacitance (Note 1)

Drain-Substrate Capacitance (Note 1)

Turn-On Delay Time (Note 1)

Rise Time (Note 1)

2.0

I_D= 10mA, V_GS= 10V

V_GS= 10V, I_D= 0, f = 1kHz

V_DS= 10V, I_D= 2.0mA, f = 1kHz

V_DS= 0, V_GS= 0, f = 1MHz

V_DS= 10V, V_GS= 0, f = 1MHz

V_D(SUB)= 10V, f = 1MHz

200

Ω

| Y_fs

C_rss

C_iss

1000

µS

1.3

5.0

3.0

C_d(sub)

t_d(on)

t_r

VDD = 10V, I_D(on)= 10mA,

V_GS(on)= 10V, V_GS(off)= 0,

_G= 50Ω

t_d(off)

t_f

Turn-Off Delay Time (Note 1)

Fall Time (Note 1)

3.0

NOTE 1: For design reference only, not 100% tested.

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