Datasheet > 30KPA51A

30KPA51A

更新时间： 2024-10-28 06:21:23

品牌	Logo	应用领域
MDE		二极管局域网
页数	文件大小	规格书
3页	26K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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数据手册

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30KPA51A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

30KPA SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-28.0 TO 400 Volts

30000 Watt Peak Pulse Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

P-600

• 30000W Peak Pulse Power

capability on 10/1000 µs waveform

• Excellent clamping capability

1.0(25.4) MIN

• Repetition rate (duty cycle):0.05%

• Low incremental surge resistance

• Fast response time: typically less

than 1.0 ps from 0 volts to BV

.360(9.1)

.340(8.6)

DIA

.360(9.1)

.340(8.6)

• Typical Id less than 1µA above 10V

• High temperature soldering guaranteed:

265°C/10 seconds/.375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

.052(1.3)

.048(1.2)

DIA

1.0(25.4) MIN

MECHANICAL DATA

Case:Molded plastic over glass passivated junction

Terminals: Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Dimensions in inches (milimeters)

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.07 ounce, 2.1 gram

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types 30KPA28 thru types 30KPA400

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

UNITS

Peak Pulse Power Dissipation on 10/1000 µs

P_PPM

Minimum 30000

Watts

waveform (NOTE 1)

Peak Pulse Current of on 10-1000 µs waveform

(NOTE 1)

I_PPM

SEE TABLE 1

8.0

Amps

Watts

Steady State Power Dissipation at Tl=75 °C

Lead Lengths.375", (9.5mm)(NOTE 2)

P_M(AV)

Peak Forward Surge Current, 8.3ms Sine-Wave

Superimposed on Rated Load, (JEDEC Method)

(NOTE 3)

I_FSM

400.0

Amps

°C

Operatings and Storage Temperature Range

NOTES:

T_J, T_STG

-55 to +175

1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

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与30KPA51A相关器件

型号	品牌	获取价格	描述	数据表
30KPA51A/B	YAGEO	获取价格	Trans Voltage Suppressor Diode,
30KPA51A/TR13	YAGEO	获取价格	Trans Voltage Suppressor Diode,
30KPA51A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
30KPA51AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, RO
30KPA51A-HR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 30000W, 51V V(RWM), Unidirectional, 1 Element, Silicon,
30KPA51A-HRA	LITTELFUSE	获取价格	30KPA-HRA高可靠性系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起
30KPA51ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 51V V(RWM), Unidirectional,
30KPA51ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 51V V(RWM), Unidirectional,
30KPA51C	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 30000W, 51V V(RWM), Bidirectional, 1 Element, Silicon, PLA
30KPA51C	NJSEMI	获取价格	Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R

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