是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | O-PALF-W2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.69 | 其他特性: | PRSM-MIN, UL RECOGNIZED |
最大击穿电压: | 40.4 V | 最小击穿电压: | 36.9 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 30000 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 8 W | 最大重复峰值反向电压: | 33 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
30KP33CATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 33V V(RWM), Bidirectional, | |
30KP33CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
30KP33CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
30KP33E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
30KP33S | LGE |
获取价格 |
Glass passivated junction chip | |
30KP33SA | LGE |
获取价格 |
Glass passivated junction chip | |
30KP33SC | LGE |
获取价格 |
Glass passivated junction chip | |
30KP33SCA | LGE |
获取价格 |
Glass passivated junction chip | |
30KP350 | NJSEMI |
获取价格 |
30KW TRANSIENT VOLTAGE SUPPRESSOR | |
30KP350A | MDE |
获取价格 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |