是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | HTS代码: | 8541.10.00.80 |
风险等级: | 5.71 | 其他特性: | HIGH SURGE CAPABILITY |
应用: | HIGH VOLTAGE HIGH POWER | 外壳连接: | ANODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-205AB |
JESD-30 代码: | O-CUPM-H1 | 最大非重复峰值正向电流: | 8640 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最大输出电流: | 330 A |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 1600 V |
表面贴装: | NO | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
307UR160P5 | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 330A, 1600V V(RRM), Silicon, DO-205AB, | |
307UR160P5PBF | INFINEON |
获取价格 |
330A, 1600V, SILICON, RECTIFIER DIODE, DO-205AB | |
307UR160PBF | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 330A, 1600V V(RRM), Silicon, DO-205AB, | |
307UR200 | THINKISEMI |
获取价格 |
ThinkiSemi 330A,1600V Rotating Rectifier Stud Type Standard Recovery Diode | |
307UR200P2 | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 330A, 2000V V(RRM), Silicon, DO-205AB, | |
307UR200P2PBF | INFINEON |
获取价格 |
330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB | |
307UR200P4 | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 330A, 2000V V(RRM), Silicon, DO-205AB, | |
307UR200P4PBF | INFINEON |
获取价格 |
330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB | |
307UR200P5PBF | INFINEON |
获取价格 |
330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB | |
307UR250 | THINKISEMI |
获取价格 |
ThinkiSemi 330A,1600V Rotating Rectifier Stud Type Standard Recovery Diode |