Datasheet > 300A170DN2

300A170DN2

更新时间： 2024-09-16 23:20:43

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
4页	238K
描述
IGBT Module

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中文翻译

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数据手册

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300A170DN2 数据手册

BYM 300 A 170 DN2

Diode Power Module

• Inside fast free-wheeling diode

• Package with insulated metal base plate

• Diode especially for brake choppers

• matched with BSM 300 GA 170 DN 2

Type

Package

Ordering Code

R25

FDC

BYM 300 A 170 DN2

1700V 380A SINGLE DIODE 1

C67070-A2901-A67

Maximum Ratings

Parameter

Symbol

Values

Unit

Diode reverse voltage

R25

T = 25 °C

1700

DC current

FDC

T = 25 °C

380

250

T = 80 °C

Pulsed diode current, t = 1 ms

Fpuls

T = 25 °C

760

500

T = 80 °C

i t-value, Diode, t = 10 ms, T = 150 °C

i t

42050

830

A s

Power dissipation per Diode

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

Thermal resistance, chip case

£ 0.17

K/W

Vac

thJC

Insulation test voltage, t = 1min.

Creepage distance

4000

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Oct-27-1997

12 3 4

中文翻译

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