Datasheet > 300A120DN2

300A120DN2

更新时间： 2024-11-08 23:20:43

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
4页	125K
描述
IGBT Module

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中文翻译

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数据手册

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300A120DN2 数据手册

BYM 300 A 120 DN2

Diode Power Module

• Inside fast free-wheeling diode

• Package with insulated metal base plate

• Diode especially for brake choppers

• matched with BSM 300 GA 120 DN 2

Type

Package

Ordering Code

R25

FDC

BYM 300 A 120 DN2

1200V 450A SINGLE DIODE 1

C67067-A2900-A70

Maximum Ratings

Parameter

Symbol

Values

Unit

Diode reverse voltage

R25

T = 25 °C

1200

DC current

FDC

T = 25 °C

450

300

T = 80 °C

Pulsed diode current, t = 1 ms

Fpuls

T = 25 °C

900

600

T = 80 °C

i t-value, Diode, t = 10 ms, T = 150 °C

∫i t

42000

1000

A s

Power dissipation per Diode

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

Thermal resistance, chip case

0.125

2500

K/W

Vac

≤

thJC

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Oct-27-1997

12 3 4

中文翻译

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