Datasheet > 30-FT12NMA200SH-M660F08

30-FT12NMA200SH-M660F08

更新时间： 2023-09-03 20:24:58

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	1411K
描述
Easy paralleling;High speed switching;Low switching losses

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30-FT12NMA200SH-M660F08 数据手册

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30-FT12NMA200SH-M660F08

30-PT12NMA200SH-M660F08Y

datasheet

flow 2 MNPC

1200 V / 200 A

Features

flow 2 13mm housing

● Mixed voltage NPC topology

● Reactive power capability

● Low inductance layout

● High speed IGBT and split output

● Common collector neutral connection

Target Applications

Schematic

● Solar inverter

● UPS

● Active frontend

Types

● 30-FT12NMA200SH-M660F08

● 30-PT12NMA200SH-M660F08Y

Maximum Ratings

T _j= 25 °C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Half Bridge Sw. Protection Diode

Repetitive peak reverse voltage

DC forward current

V _RRM

I _F

I _FRM

P _tot

1200

T _j= T _jmax

T _s= 80 °C

t _p= 10 ms

Maximum repetitive forward current

Power dissipation

°C

T _jmax

Maximum Junction Temperature

150

Half Bridge Switch

V _CE

I _C

Collector-emitter breakdown voltage

1200

171

600

400

434

±20

T _j= T _jmax

T _s= 80 °C

DC collector current

I _CRM

t _plimited by T _jmax

Repetitive peak collector current

Turn off safe operation area

Power dissipation

V _CEmax = 1200V, T _vj≤ 150°C

T _j= T _jmax

P _tot

V _GE

T _s= 80 °C

Gate-emitter peak voltage

Short circuit ratings

t _SC

V _CC

T _j≤ 150 °C

V _GE= 15 V

µs

800

T _jmax

Maximum Junction Temperature

175

°C

08 Apr. 2017 / Revision 3

12 3 4 5 6 7...32

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