30-FT12NMA200SH-M660F08 PDF预览

30-FT12NMA200SH-M660F08

更新时间: 2025-09-22 11:08:15
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
32页 1411K
描述
Easy paralleling;High speed switching;Low switching losses

30-FT12NMA200SH-M660F08 数据手册

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30-FT12NMA200SH-M660F08  
30-PT12NMA200SH-M660F08Y  
datasheet  
flow 2 MNPC  
1200 V / 200 A  
Features  
flow 2 13mm housing  
● Mixed voltage NPC topology  
● Reactive power capability  
● Low inductance layout  
● High speed IGBT and split output  
● Common collector neutral connection  
Target Applications  
Schematic  
● Solar inverter  
● UPS  
● Active frontend  
Types  
● 30-FT12NMA200SH-M660F08  
● 30-PT12NMA200SH-M660F08Y  
Maximum Ratings  
T j = 25 °C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Half Bridge Sw. Protection Diode  
Repetitive peak reverse voltage  
DC forward current  
V RRM  
I F  
I FRM  
P tot  
1200  
25  
V
A
T j = T jmax  
T s = 80 °C  
T s = 80 °C  
t p = 10 ms  
Maximum repetitive forward current  
Power dissipation  
30  
A
52  
W
°C  
T jmax  
Maximum Junction Temperature  
150  
Half Bridge Switch  
V CE  
I C  
Collector-emitter breakdown voltage  
1200  
171  
600  
400  
434  
±20  
V
A
T j = T jmax  
T s = 80 °C  
DC collector current  
I CRM  
t p limited by T jmax  
Repetitive peak collector current  
Turn off safe operation area  
Power dissipation  
A
V CEmax = 1200V, T vj ≤ 150°C  
T j = T jmax  
A
P tot  
V GE  
T s = 80 °C  
W
V
Gate-emitter peak voltage  
Short circuit ratings  
t SC  
V CC  
T j ≤ 150 °C  
V GE = 15 V  
10  
µs  
V
800  
T jmax  
Maximum Junction Temperature  
175  
°C  
copyright Vincotech  
1
08 Apr. 2017 / Revision 3  

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