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2SK4078 PDF预览

2SK4078

更新时间: 2024-10-14 03:56:43
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日电电子 - NEC 开关
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8页 178K
描述
SWITCHING N-CHANNEL POWER MOS FET

2SK4078 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4078  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications.  
ORDERING INFORMATION  
LEAD PLATING  
PACKING  
PART NUMBER  
PACKAGE  
2SK4078-ZK-E1-AY Note  
2SK4078-ZK-E2-AY Note  
TO-252 (MP-3ZK)  
typ. 0.27 g  
Pure Sn (Tin)  
Tape 2500 p/reel  
Note Pb-free (This product does not contain Pb in external electrode.)  
FEATURES  
Low on-state resistance  
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A)  
RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A)  
Low input capacitance  
(TO-252)  
Ciss = 2300 pF TYP.  
Logic level drive type  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
40  
V
V
20  
50  
A
150  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
45  
W
W
°C  
°C  
A
PT2  
1.0  
150  
Tch  
Storage Temperature  
Tstg  
55 to +150  
23  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
52  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
2.77  
125  
°C/W  
°C/W  
Rth(ch-A)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18885EJ1V0DS00 (1st edition)  
Date Published July 2007 NS  
Printed in Japan  
2007  

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