Datasheet > 2SK3911_09

2SK3911_09

更新时间： 2024-02-17 22:47:16

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	187K
描述
Switching Regulator Applications

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中文翻译

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数据手册

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2SK3911_09 数据手册

2SK3911

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI)

2SK3911

Switching Regulator Applications

Unit: mm

•

Small gate charge: Q = 60 nC (typ.)

Low drain-source ON resistance: R

= 0.22 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 11 S (typ.)

Low leakage current: I

= 500 μA (V

= 600 V)

DSS

Enhancement model: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

1. GATE

2. DRAIN (HEATSINK)

3. SOURCE

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

150

JEDEC

―

Single pulse avalanche energy

792

JEITA

SC-65

(Note 2)

Avalanche current

TOSHIBA

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

stg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C during

use of the device.

Note 2:

= 90 V, T = 25°C (initial), L = 3.46 mH, I

= 20 A, R = 25 Ω

AR G

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

中文翻译

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