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2SK3653J4-A PDF预览

2SK3653J4-A

更新时间: 2024-09-29 06:19:55
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
6页 44K
描述
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 0814, SOF-3

2SK3653J4-A 数据手册

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DATA SHEET  
JUNCTION FIELD EFFECT TRANSISTOR  
2SK3653  
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR  
FOR IMPEDANCE CONVERTER OF ECM  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The 2SK3653 is suitable for converter of ECM.  
0.3 ±0.05  
0.13 +00..015  
FEATURES  
Compact package  
0~0.05  
G
High forward transfer admittance  
1000 µS TYP. (IDSS = 100 µA)  
1600 µS TYP. (IDSS = 200 µA)  
Includes diode and high resistance at G - S  
D
S
0.9  
1.4 ±0.1  
ORDERING INFORMATION  
MAX. 0.4  
PART NUMBER  
2SK3653  
PACKAGE  
3pinXSOF (0814)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
+0.1  
–0  
0.2  
Drain to Source Voltage Note1  
VDSX  
20  
–20  
10  
V
V
Gate to Drain Voltage  
Drain Current  
VGDO  
ID  
EQUIVALENT CIRCUIT  
mA  
mA  
mW  
°C  
Gate Current  
IG  
10  
Total Power Dissipation Note2  
Junction Temperature  
Storage Temperature  
Drain  
PT  
Tj  
80  
125  
Gate  
Tstg  
–55 to +125 °C  
Source  
Notes 1. VGS = –1.0 V  
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm  
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 2002 NS CP(K)  
Printed in Japan  
D16293EJ1V0DS00 (1st edition)  
2002  
©

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