5秒后页面跳转
2SK3353-S PDF预览

2SK3353-S

更新时间: 2024-11-06 22:52:55
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
4页 45K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3353-S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.75雪崩能效等级(Eas):202 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):82 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):328 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3353-S 数据手册

 浏览型号2SK3353-S的Datasheet PDF文件第2页浏览型号2SK3353-S的Datasheet PDF文件第3页浏览型号2SK3353-S的Datasheet PDF文件第4页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3353  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3353  
The 2SK3353 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3353-S  
FEATURES  
2SK3353-Z  
TO-220SMD  
Super low on-state resistance:  
DS(on)1  
GS  
D
R
R
= 9.5 mMAX. (V = 10 V, I = 41 A)  
DS(on)2  
GS  
D
= 14 mMAX. (V = 4 V, I = 41 A)  
iss  
iss  
Low C : C = 4650 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
VDSS  
VGSS(AC)  
ID(DC)  
ID(pulse)  
PT  
60  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±82  
A
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±328  
95  
A
W
W
°C  
°C  
A
PT  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
45  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
202  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
Channel to Case  
Rth(ch-C)  
Rth(ch-A)  
1.32  
83.3  
°C/W  
°C/W  
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 1999 NS CP(K)  
Printed in Japan  
D14130EJ1V0DS00 (1st edition)  
The mark shows major revised points.  
1999  
©

与2SK3353-S相关器件

型号 品牌 获取价格 描述 数据表
2SK3353-S-AZ RENESAS

获取价格

2SK3353-S-AZ
2SK3353-Z NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3353-Z RENESAS

获取价格

82A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN
2SK3353-Z-AZ NEC

获取价格

Power Field-Effect Transistor, 82A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Met
2SK3353-ZJ RENESAS

获取价格

82A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN
2SK3353-ZJ-AZ RENESAS

获取价格

2SK3353-ZJ-AZ
2SK3353-ZJ-E1-AZ RENESAS

获取价格

2SK3353-ZJ-E1-AZ
2SK3354 KEXIN

获取价格

MOS Field Effect Transistor
2SK3354 TYSEMI

获取价格

Super low on-state resistance: RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 42 A)
2SK3354 NEC

获取价格

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE