Datasheet > 2SK2869(S)-(1)

2SK2869(S)-(1)

更新时间： 2024-11-15 14:46:23

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
12页	57K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2869(S)-(1) 数据手册

2SK2869

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-570 (Z)

1st. Edition

Sep. 1997

Features

•

Low on-resistance

R_DS= 0.033 Ω typ.

•

High speed switching

4V gate drive device can be driven from 5V source

Outline

DPAK–2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
2SK2869(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)-(3)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
2SK2869(S)TL	RENESAS	获取价格	20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2869(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
2SK2869(S)TR	RENESAS	获取价格	20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2869L	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869S	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869S-E	RENESAS	获取价格	暂无描述