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2SK2538 PDF预览

2SK2538

更新时间: 2024-11-15 22:52:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 46K
描述
Silicon N-Channel Power F-MOS

2SK2538 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.83
Is Samacsys:N雪崩能效等级(Eas):10 mJ
配置:SINGLE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):4 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2538 数据手册

 浏览型号2SK2538的Datasheet PDF文件第2页浏览型号2SK2538的Datasheet PDF文件第3页 
Power F-MOS FETs  
2SK2538  
Silicon N-Channel Power F-MOS  
Unit : mm  
Features  
10.0±0.2  
5.5±0.2  
4.2±0.2  
Avalanche energy capability guaranteed  
2.7±0.2  
High-speed switching  
No secondary breakdown  
ø3.1±0.1  
Applications  
High-speed switching (switching mode regulator)  
1.3±0.2  
For high-frequency power amplification  
1.4±0.1  
0.5 +0.2  
-
0.1  
0.8±0.1  
Absolute Maximum Ratings (Tc = 25˚C)  
2.54±0.25  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Unit  
V
Rating  
Drain-Source breakdown voltage  
Gate-Source voltage  
250  
5.08±0.5  
1
2
3
V
±30  
1 : Gate  
DC  
Drain current  
A
±2  
2 : Drain  
3 : Source  
TO-220 Full Pack Package (a)  
Pulse  
IDP  
A
±4  
Avalanche energy capability  
EAS *  
mJ  
10  
TC= 25˚C  
30  
Allowable power  
dissipation  
PD  
W
Ta= 25˚C  
2
Channel temperature  
Storage temperature  
Tch  
˚C  
˚C  
150  
Tstg  
–55 to +150  
* L= 5mH, IL= 2A, VDD= 30V, 1 pulse  
Electrical Characteristics (Tc = 25˚C)  
Parameter  
Drain-Source cut-off current  
Gate-Source leakage current  
Drain-Source breakdown voltage  
Gate threshold voltage  
Drain-Source ON-resistance  
Forward transadmittance  
Diode forward voltage  
Input capacitance  
Symbol  
IDSS  
Condition  
Min  
Typ  
Max  
100  
±1  
Unit  
µ A  
µ A  
V
VDS= 200V, VGS= 0  
IGSS  
VGS=±30V, VDS= 0  
ID=1mA, VGS= 0  
VDS=10V, ID=1mA  
VGS=10V, ID=1A  
VDS= 25V, ID=1A  
IDR= 2A, VGS= 0  
VDSS  
Vth  
250  
1
5
2
V
RDS(on)  
1.2  
1
|Yfs  
|
0.5  
S
VDSF  
Ciss  
–1.6  
V
220  
60  
20  
10  
20  
45  
90  
pF  
pF  
pF  
ns  
Output capacitance  
Coss  
Crss  
V
DS=10V, VGS= 0, f=1MHz  
Feedback capacitance  
Turn-on time (delay time)  
Rise time  
td(on)  
tr  
VDD= 200V, ID= 2A  
ns  
Fall time  
tf  
VGS=10V, RL=100Ω  
ns  
Turn-off time (delay time)  
Channel-Case heat resistance  
Channel-Atmosphere heat resistance  
td(off)  
Rth(ch-c)  
Rth(ch-a)  
ns  
4.17  
62.5  
˚C/W  
˚C/W  

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