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2SK2542(F)

更新时间： 2024-02-20 16:46:16
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东芝 - TOSHIBA 晶体稳压器开关晶体管功率场效应晶体管脉冲局域网
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2SK2542(F) 数据手册

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2SK2542  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2542  
Switching Regulator Applications  
Unit: mm  
z 4-V gate drive  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 0.75 Ω (typ.)  
DS (ON)  
: |Y | = 7.0 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 500 V)  
DSS  
DS  
: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
500  
500  
±30  
8
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
32  
A
DP  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
80  
W
D
AS  
AR  
JEDEC  
JEITA  
TO-220AB  
SC-46  
E
312  
mJ  
(Note 2)  
TOSHIBA  
2-10P1B  
Avalanche current  
I
8
8
A
Weight: 2.0 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.56  
83.3  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (ch−c)  
th (ch−a)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 8.3 mH, R = 25 Ω, I = 8 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-02  
123456

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