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2SK2549_06 PDF预览

2SK2549_06

更新时间: 2024-02-19 16:50:03
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器继电器电机DC-DC转换器
页数 文件大小 规格书
6页 678K
描述
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

2SK2549_06 数据手册

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2SK2549  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK2549  
DCDC Converter, Relay Drive and Motor Drive  
Applications  
Unit: mm  
z 2.5-V gate drive  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 0.29 (typ.)  
DS (ON)  
: |Y | = 3.0 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 16 V)  
DSS  
DS  
: V = 0.5~1.1 V (V  
= 10 V, I = 200 μA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
16  
16  
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
±8  
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
2
D
Drain current  
A
I
6
DP  
Drain power dissipation  
Drain power dissipation  
Channel temperature  
P
0.5  
W
W
D
D
JEDEC  
(Note 2)  
P
1.5  
T
ch  
150  
55~150  
°C  
°C  
JEITA  
Storage temperature range  
T
stg  
TOSHIBA  
2-5K1B  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)  
Weight: 0.05 g (typ.)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change  
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
250  
Unit  
Thermal resistance, channel to  
ambient  
R
°C / W  
th (cha)  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
Marking  
Part No. (or abbreviation code)  
Z 7  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Lot No.  
1
2006-11-16  

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