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2SK2306F5 PDF预览

2SK2306F5

更新时间: 2024-01-22 02:11:29
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 79K
描述
Power Field-Effect Transistor, 3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK2306F5 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:20 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2306F5 数据手册

 浏览型号2SK2306F5的Datasheet PDF文件第2页 

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