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2SK2232(T) PDF预览

2SK2232(T)

更新时间: 2024-02-09 06:48:57
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机高压驱动DC-DC转换器斩波器
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2SK2232(T) 数据手册

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2SK2232  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)  
2SK2232  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z 4-V gate drive  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 36 m(typ.)  
DS (ON)  
: |Y | = 16 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
: V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
±20  
25  
V
GSS  
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
100  
35  
A
DP  
JEDEC  
JEITA  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
W
D
AS  
AR  
SC-67  
2-10R1B  
E
156  
mJ  
(Note 2)  
TOSHIBA  
Avalanche current  
I
25  
3.5  
A
Weight: 1.9 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
3.57  
62.5  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 25 V, T = 25°C (initial), L = 339 μH, R = 25 , I = 25 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-17  

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