是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220FM | 包装说明: | SC-67, TO-220FM, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.36 |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 2.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 35 W | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Copper (Sn/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK1934-E | RENESAS |
功能相似 |
Silicon N Channel MOS FET | |
2SK1637 | RENESAS |
功能相似 |
Silicon N Channel MOS FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1638 | ISC |
获取价格 |
Drain Current âID= 3A@ TC=25C | |
2SK1639 | ISC |
获取价格 |
Drain Current âID= 4A@ TC=25C | |
2SK163K | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK163L | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK163M | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction | |
2SK1641 | TOSHIBA |
获取价格 |
TRANSISTOR 20 A, 250 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET | |
2SK1642 | TOSHIBA |
获取价格 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE | |
2SK1643 | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpos | |
2SK1645 | SANYO |
获取价格 |
For C to X-band Local Oscillator and Amplifier | |
2SK1646 | SANYO |
获取价格 |
For C to X-band Local Oscillator and Amplifier |