是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220FM, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.36 | Is Samacsys: | N |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 2.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2SK1934-E | RENESAS |
功能相似 |
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2SK1637-E | RENESAS |
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Silicon N Channel MOS FET | |
2SK1637 | HITACHI |
功能相似 |
Silicon N-Channel MOS FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1637|2SK2422 | ETC |
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||
2SK1637-E | RENESAS |
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Silicon N Channel MOS FET | |
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TRANSISTOR 20 A, 250 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET | |
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2SK1643 | TOSHIBA |
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TRANSISTOR 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpos |