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2SK1412LS

更新时间： 2024-10-31 22:45:07
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
4页 37K
描述
Ultrahigh-Speed Switching Applications

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中文翻译

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2SK1412LS 技术参数

生命周期：Obsolete零件包装代码：TO-220FI
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.84
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：1500 V最大漏极电流 (Abs) (ID)：0.1 A
最大漏极电流 (ID)：0.1 A最大漏源导通电阻：200 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：20 W最大功率耗散 (Abs)：20 W
最大脉冲漏极电流 (IDM)：0.2 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK1412LS 数据手册

 浏览型号2SK1412LS的Datasheet PDF文件第2页浏览型号2SK1412LS的Datasheet PDF文件第3页浏览型号2SK1412LS的Datasheet PDF文件第4页 
Ordering number : ENN4228B  
N-Channel Silicon MOSFET  
2SK1412LS  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
2078C  
•
Low ON-resistance, low input capacitance.  
Ultrahigh-speed switching.  
•
• High reliability (Adoption of HVP process).  
• Micaless package facilitating mounting.  
[2SK1412LS]  
10.0  
4.5  
3.2  
2.8  
0.9  
1.2  
1.2  
0.75  
0.7  
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
2.55  
2.55  
SANYO : TO-220FI(LS)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
1500  
±20  
0.1  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
0.2  
A
DP  
2.0  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
20  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
1500  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
V
I
=1mA, V =0  
V
(BR)DSS  
D GS  
I
V
V
=1200V, V =0  
GS  
100  
µA  
nA  
DSS  
GSS  
DS  
I
=±20V, V =0  
DS  
±100  
GS  
(Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source.  
Marking : K1412  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1501 TS IM TA-3431 / 51099 TH (KT) / 41293 TH (KOTO) AX-9637 No.4228-1/4  
1234

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