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2SK1315L PDF预览

2SK1315L

更新时间: 2024-11-08 06:24:31
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 57K
描述
Silicon N-Channel MOS FET

2SK1315L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknown风险等级:5.31
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:450 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.7 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK1315L 数据手册

 浏览型号2SK1315L的Datasheet PDF文件第2页浏览型号2SK1315L的Datasheet PDF文件第3页浏览型号2SK1315L的Datasheet PDF文件第4页浏览型号2SK1315L的Datasheet PDF文件第5页浏览型号2SK1315L的Datasheet PDF文件第6页浏览型号2SK1315L的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

2SK1315L 替代型号

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