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2SK1155 PDF预览

2SK1155

更新时间: 2024-01-11 12:40:16
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 83K
描述
Silicon N Channel MOS FET

2SK1155 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:SC-46, 3 PIN针数:4
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.35外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:1.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:TIN COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK1155 数据手册

 浏览型号2SK1155的Datasheet PDF文件第1页浏览型号2SK1155的Datasheet PDF文件第3页浏览型号2SK1155的Datasheet PDF文件第4页浏览型号2SK1155的Datasheet PDF文件第5页浏览型号2SK1155的Datasheet PDF文件第6页浏览型号2SK1155的Datasheet PDF文件第7页 
2SK1155, 2SK1156  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
Drain to source voltage  
2SK1155  
2SK1156  
VDSS  
450  
V
500  
Gate to source voltage  
Drain current  
VGSS  
±30  
V
A
ID  
5
1
Drain peak current  
ID(pulse)  
*
20  
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
5
50  
A
Pch*2  
Tch  
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at TC = 25°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
450  
500  
±30  
Typ  
Max  
Unit  
Test conditions  
Drain to source  
breakdown voltage  
2SK1155  
2SK1156  
V(BR)DSS  
V
ID = 10 mA, VGS = 0  
Gate to source breakdown voltage  
Gate to source leak current  
V(BR)GSS  
IGSS  
V
IG = ±100 µA, VDS = 0  
VGS = ±25 V, VDS = 0  
VDS = 360 V, VGS = 0  
±10  
250  
µA  
µA  
Zero gate voltage drain  
current  
2SK1155  
2SK1156  
IDSS  
V
DS = 400 V, VGS = 0  
Gate to source cutoff voltage  
VGS(off)  
RDS(on)  
2.0  
2.5  
1.0  
1.2  
4.0  
640  
160  
20  
3.0  
1.4  
1.5  
V
ID = 1 mA, VDS = 10 V  
Static drain to source on 2SK1155  
ID = 2.5 A, VGS = 10 V *3  
ID = 2.5 A, VDS = 10 V *3  
state resistance  
2SK1156  
Forward transfer admittance  
Input capacitance  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
10  
ID = 2.5 A, VGS = 10 V,  
RL = 12 Ω  
25  
Turn-off delay time  
Fall time  
td(off)  
tf  
50  
30  
Body to drain diode forward voltage  
VDF  
trr  
0.95  
300  
IF = 5 A, VGS = 0  
Body to drain diode reverse recovery  
time  
ns  
IF = 5 A, VGS = 0,  
diF/dt = 100 A/µs  
Note: 3. Pulse test  
Rev.2.00 Sep 07, 2005 page 2 of 6  

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