2SK1152L-E

更新时间： 2024-02-18 21:37:30

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	89K
描述
Silicon N Channel MOS FET

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数据手册

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2SK1152L-E 数据手册

2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

Ratings

Unit

2SK1151

2SK1152

V_DSS

450

500

Gate to source voltage

Drain current

V_GSS

I_D

I_D(pulse)

I_DR

±30

1.5

Drain peak current

1.5

Body to drain diode reverse drain current

Channel dissipation

Pch*²

°C

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T_C= 25°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown 2SK1151

V_(BR)DSS

450

500

±30

—

I_D= 10 mA, V_GS= 0

voltage

2SK1152

Gate to source breakdown voltage

Gate to source leak current

V_(BR)GSS

I_GSS

—

I_G= ±100 µA, V_DS= 0

V_GS= ±25 V, V_DS= 0

V_DS= 360 V, V_GS= 0

V_DS= 400 V, V_GS= 0

I_D= 1 mA, V_DS= 10 V

I_D= 1 A, V_GS= 10 V *³

±10

100

µA

Zero gate voltage drain

current

2SK1151

I_DSS

—

2SK1152

Gate to source cutoff voltage

V_GS(off)

R_DS(on)

2.0

—

0.6

—

3.5

4.0

1.1

160

3.0

5.5

6.0

—

Static drain to source on

state resistance

2SK1151

2SK1152

Ω

Forward transfer admittance

Input capacitance

|y_fs|

Ciss

Coss

Crss

t_d(on)

t_r

I_D= 1 A, V_DS= 20 V *³

V_DS= 10 V, V_GS= 0,

f = 1 MHz

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

I_D= 1 A, V_GS= 10 V,

R_L= 30 Ω

1.0

220

Turn-off delay time

Fall time

t_d(off)

t_f

Body to drain diode forward voltage

V_DF

t_rr

I_F= 1.5 A, V_GS= 0

Body to drain diode reverse recovery

time

I_F= 1.5 A, V_GS= 0,

di_F/dt = 100 A/µs

Note: 3. Pulse test

Rev.2.00 Sep 07, 2005 page 2 of 7

123 4 5 6 7 8

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