Datasheet > 2SJ387(L)|2SJ387(S)

2SJ387(L)|2SJ387(S)

更新时间： 2022-01-19 02:20:00

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2SJ387(L)|2SJ387(S) 数据手册

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2SJ387(L), 2SJ387(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V_(BR)DSS

V_(BR)GSS

I_GSS

–20

—

I_D= –10 mA, V_GS= 0

Gate to source breakdown

voltage

±10

—

I_G= ±200 µA, V_DS= 0

Gate to source leak current

—

±10

µA

V_GS= ±6.5 V, V_DS= 0

V_DS= –16 V, V_GS= 0

I_D= –1 mA, V_DS= –10 V

I_D= –5 A

Zero gate voltage drain current I_DSS

—

–100

–1.5

0.07

Gate to source cutoff voltage

V_GS(off)

–0.5

—

Static drain to source on state R_DS(on)

resistance

0.05

_GS= –4 V*¹

I_D= –5 A

_GS= –2.5 V*¹

I_D= –5 A

_DS= –10 V*¹

—

0.07

0.1

—

Forward transfer admittance

|y_fs|

Input capacitance

Output capacitance

Ciss

—

1170

860

310

—

V_DS= –10 V

V_GS= 0

Coss

Reverse transfer capacitance Crss

f = 1 MHz

I_D= –5 A

V_GS= –4 V

R_L= 2

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

325

350

425

–1.0

Turn-off delay time

Fall time

Body to drain diode forward

voltage

V_DF

I_F= –10 A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

240

—

I_F= –10 A, V_GS= 0,

diF/dt = 20 A/µs

Note: 1. Pulse Test

1 234 5 6 7...12

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型号	品牌	描述	获取价格	数据表
2SJ387(S)	RENESAS	10A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3	获取价格
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2SJ387(S)-(2)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA	获取价格
2SJ387(S)-(3)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,10A I(D),TO-252AA	获取价格
2SJ387(S)TL	HITACHI	暂无描述	获取价格
2SJ387(S)TR	HITACHI	Power Field-Effect Transistor, 10A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta	获取价格