Datasheet > 2SJ380_09

2SJ380_09

更新时间： 2022-09-18 11:38:08

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	230K
描述
Relay Drive, DC-DC Converter and Motor Drive Applications

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2SJ380_09 数据手册

2SJ380

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²-π-MOSV)

2SJ380

Relay Drive, DC-DC Converter and Motor Drive

Applications

Unit: mm

•

4-V gate drive

Low drain-source ON resistance: R

= 0.15 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 7.7 S (typ.)

Low leakage current: I

= −100 μA (max) (V

= −100 V)

DSS

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−100

±20

−12

−48

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

SC-67

Single pulse avalanche energy

312

TOSHIBA

2-10R1B

(Note 2)

Weight: 1.9 g (typ.)

Avalanche current

−12

3.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.57

62.5

°C/W

th (ch-c)

th (ch-a)

Note1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −25 V, T = 25°C (initial), L = 2.94 mH, R = 25 Ω, I = −12 A

Note 3: Repetitive rating: pulse width limited by maximum junction temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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